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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC643A DESCRIPTION With TO-3 package High voltage,high reliability Low collector saturation voltage APPLICATIONS For color TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER ANG INCH Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Collector-base voltage EMIC ES Open emitter Open base Open collector CONDITIONS OND TOR UC VALUE 1500 700 5 2.5 UNIT V V V A W ae ae TC=25ae 50 150 -55~150 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC643A SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V ICBO Collector cut-off current VCB=500V;IE=0 10 |I A IEBO Emitter cut-off current VEB=5V; IC=0 100 |I A hFE DC current gain fT Transition frequency ANG CH IC=2A ; VCE=15V 5 IC=0.1A ; VCE=10V IN EMIC ES DUC ON 2 TOR MHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC643A SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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